品牌/商标 | AOKE | 型号/规格 | FQPF5N60C |
种类 | *缘栅(MOSFET) | 沟道类型 | N沟道 |
导电方式 | 增强型 | 用途 | NF/音频(低频) |
封装外形 | CER-DIP/陶瓷直插 | 材料 | N-FET硅N沟道 |
开启电压 | 1(V) | 夹断电压 | 1(V) |
低频跨导 | 1(μS) | *间电容 | 1(pF) |
低频噪声系数 | 1(dB) | *大漏*电流 | 1(mA) |
*大耗散功率 | 1(mW) |
强势代理FQPF5N60C 场效应管 TO-220F封装
广泛应用于:风扇控制板,控制电源,LED驱动电源,路灯电源,灯杯电源,LCD电源、机箱电源、逆变器
诚征分销商.
规格书:
https://www.hbic.cn/aoke/down/fqpf5n60c.pdf
600V N-Channel MOSFET
Features
■ 4.5A,600v,RDS(on)=2.2?@VGS=10V
■ Low gate charge
■ Low Crss (t*ical 14pF)
■ Fast switching
■ 100% AvalancheTested
■ Improved dv/dt capability
■ ROHS product
General Description
This Power MOSFET is produced using AOKE’s advanced
planar stripe, DMOS technology.This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics, such as fast switching time,low
on resistance.low gate charge and especially excellent avalanche
characteristics. This power MOS ET is usually used at AC F
adaptors, on the battery charger and SMPS
友情链接: 深圳市元东发电子有限公司