Item Symbol Ratings Unit Remarks
Drain-source voltage VDS 500
VDSX 500
Continuous drain current ID ±19
Pulsed drain current ID(puls] ±76
Gate-source voltage VGS ±30
Non-Repetitive IAS 19
Maximum avalanche current
Non-Repetitive EAS 245.3
Maximum avalanche energy
Maximum Drain-Source dV/dt dVDS/dt 20
Peak diode recovery dV/dt dV/dt 5
Max. power dissipation PD 2.16
97
Operating and storage Tch +150
temperature range Tstg
Isolation voltage VISO 2 kVrms
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3683-01MR
FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET
Features
High speed switching Low on-resistance
No secondary breadown Low driving power
Avalanche-proof
Applications
Switching regulators DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS
VDS=500V VGS=0V
VDS=400V VGS=0V
VGS=±30V
ID=9.5A VGS=10V
ID=9.5A VDS=25V
VCC=300V ID=9.5A
VGS=10V
RGS=10 Ω
Min. T*. Max. Units
ns
Min. T*. Max. Units
Thermal resistance
Rth(ch-c) channel to case
Rth(ch-a) channel to ambient
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250μA VGS=0V
ID= 250μA VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=250V
ID=19A
VGS=10V
L=1.25mH Tch=25°C
IF=19A VGS=0V Tch=25°C
IF=19A VGS=0V
-di/dt=100A/μs Tch=25°C

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