| 品牌：Vishay/威世通 | 型号：SI4884DY | 种类：*缘栅(MOSFET) |
| 沟道类型：N沟道 | 导电方式：增强型 | 封装外形：SMD(SO)/表面封装 |
| 材料：N-FET硅N沟道 | 开启电压：5（V） | 夹断电压：6（V） |
| 低频跨导：20（μS） | *间电容：650（pF） | 低频噪声系数：50（dB） |
| *大漏*电流：30（mA） | *大耗散功率：20（mW） |
Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:12A; On-Resistance, Rds(on):10.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC; Drain-Source Breakdown Voltage:30V
General Description Features
Absolute Maximum Ratings TA = 25o
C unless other wise noted
Symbol Parameter Si4884DY Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage &plu*n;20 V
ID Drain Current - Continuous (Note 1a) 11.5 A
- Pulsed 50
PD Power Dissipation for Single Operation (Note 1a) 2.5 W
(Note 1b) 1.2
(Note 1c) 1
TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARA*ERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W
Si4884DY Rev.A
11.5 A, 30 V. RDS(ON)
= 0.010 Ω @ VGS = 10 V
RDS(ON)
= 0.015 Ω @ VGS = 4.5 V.
Optimized for use in switching DC/DC converters with
PWM controllers.
Very fast switching.
Low gate charge (t*ical Qg = 19 nC).
SOT-23 SuperSOTTM-8 SOIC-16 SO-8 SOT-223 SuperSOTTM-6
This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
The MOSFET features faster switching and lower gate
charge than other MOSFETs with comparable RDS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive (even
at very high frequencies), and DC/DC power supply designs
with higher overall efficiency.
友情链接： 深圳市元东发电子有限公司
