氮化镓GaN氮化镓GaN wafer 北京特博万德科技

  • 型号/规格:

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  • 品牌/商标:

    北京

Specifications: Item GaN-FS-N Dimensions Ф50.8mm±1mm Thickness 300±25μm Orientation C-axis(0001)±0.5° OrientationFlat (1-100)±0.5°,16.0±1.0mm SecondaryOrientationFlat (11-20)±3°,8.0±1.0mm TTV ≤15μm BOW ≤20μm ConductionType N-type Resistivity(300K) <0.5Ω·cm DislocationDensity Lessthan5x106cm-2 UseableSurfaceArea >90% Polishing FrontSurface:Ra<0.2nm.Epi-readypolished BackSurface:Fineground Package Packagedinaclass100cleanroomenvironment,insinglewafercontainers,underanitrogenatmosphere. Item GaN-FS-10 Dimensions 10.0mm×10.5mm Thickness 300±25μm Orientation C-axis(0001)±0.5° TTV ≤15μm BOW ≤20μm ConductionType N-type Resistivity(300K) <0.5Ω·cm DislocationDensity Lessthan5x106cm-2 UseableSurfaceArea >90% Polishing FrontSurface:Ra<0.2nm.Epi-readypolished BackSurface:Fineground

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