| 品牌：AO | 型号：AO4420 | 种类：*缘栅(MOSFET) |
| 沟道类型：N沟道 | 导电方式：增强型 | 用途：D-G双栅四* |
| 封装外形：SMD(SO)/表面封装 | 材料：GE-N-FET锗N沟道 | 开启电压：10（V） |
| 夹断电压：30（V） | 跨导：10（μS） | *间电容：4000（pF） |
| 低频噪声系数：20（dB） | *大漏*电流：200（mA） | *大耗散功率：100（mW） |
原装现货General Description
The AO4420 uses advanced trench technology to
provide excellent R DS(ON),
shoot-through immunity and
body diode characteristics. This device is suitable for
use as a synchronous switch in PWM applications.
AO4420L is offered in a lead-free package. AO4420L
( Green Product ) is offered in a lead-free package.General Description
The AO4420 uses advanced trench technology to
provide excellent R DS(ON),
shoot-through immunity and
body diode characteristics. This device is suitable for
use as a synchronous switch in PWM applications.
AO4420L is offered in a lead-free package. AO4420L
( Green Product ) is offered in a lead-free package.Features
VDS (V) = 30V
ID = 13.7A
RDS(ON) < 10.5m? (VGS = 10V)
RDS(ON) < 12m? (VGS = 4.5V)
友情链接： 深圳市元东发电子有限公司
